May 8 1975
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(New page: A new antireflection-coated metal oxide semiconductor (AMOS) solar cell developed by Jet Propulsion Laboratory scientists might have potential use in the nation's solar energy program,...)
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A new antireflection-coated metal oxide semiconductor (AMOS) solar cell developed by Jet Propulsion Laboratory scientists might have potential use in the nation's solar energy program, JPL scientist Richard J. Stern reported at a Photovoltaic Specialists Conference in Phoenix. The solar cells, made from oxidized gallium' arsenide with an extremely thin nearly transparent film of gold on the surface, had demonstrated an efficiency of about 15% in terrestrial sunlight, better than the average silicon solar cell now in standard use. The new cell also had superior resistance to radiation, promising a longer lifetime in space. Dr. Stern said that the technology was' potentially adaptable to very low-cost polycrystalline thin films, with only a modest reduction in efficiency. (NASA Release 75-133)
The International Telecommunications Satellite Organization announced the award of a $99 894 15-mo contract to the Research Foundation of the State Univ. of New York for a study of radiation induced defects in solar cells. The Foundation would develop an information base for predicting electron damage to silicon solar cells over a wide range of parameters for the materials from which the cells were made. (INTELSAT Release 75-32)
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