Effect of Substrate Misorientation Angle on Self-Assembling Structures

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Author - S. Paul

Co-Author(s) -

JBIS Volume # - 52

Page # - 181-184

Year - 1999

Keywords -

JBIS Reference Code # - 1999.52.181

Number of Pages - 6

[edit] Abstract

The substrate misorientation effect on epitaxial semiconductor layers grown by organometallic vapour phase epitaxy is investigated theoretically. In-situ self-organising type of fabrication method for semiconductor devices for nanotechnology is considered. The idea of self-assembling structures to fabricate variable sized devices on the nanometre scale is proposed. Self-assembling structures for nanodevice fabrication will have a great influence on the future of space technology.


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